Variable resistance memory with a select device
US8654560B2 · kind B2 · utility
5Cited by
1References
13Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 4, 2011 |
| Grant date | Feb 18, 2014 |
| Priority date | — |
| Expiry date | Feb 9, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/8833
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
According to various embodiments, a variable resistance memory element and memory element array that uses variable resistance changes includes a select device, such as an ovonic threshold switch. The memory elements are able to switch during the very brief period when a transient pulse voltage is visible to the memory element.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.