Backside rapid thermal processing of patterned wafers
US8658945B2 · kind B2 · utility
3Cited by
14References
3Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 27, 2004 |
| Grant date | Feb 25, 2014 |
| Priority date | — |
| Expiry date | Feb 27, 2030 |
Classification
- Technology area (CPC F)Mechanical Engineering; Lighting; Heating
- CPC primaryF27D21/0014
- WIPO fieldThermal processes and apparatus
- WIPO sectorMechanical engineering
Abstract
A apparatus and method of thermally treating a wafer or other substrate, such as rapid thermal processing (RTP). An array of radiant lamps directs radiation to the back side of a wafer to heat the wafer. The front side of the wafer on which the patterned integrated circuits are being formed faces a radiant reflector. The wafer is thermally monitored for temperature and reflectivity from the side of the reflector. When the lamps are above the wafer, an edge ring supports the wafer in its edge exclusion zone. Alternatively, a reactor includes upwardly directed lamps and a reflector above and facing the front side of the wafer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.