Pillar on pad interconnect structures, semiconductor dice and die assemblies including such interconnect structures, and related methods
US8659153B2 · kind B2 · utility
6Cited by
3References
29Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 16, 2012 |
| Grant date | Feb 25, 2014 |
| Priority date | — |
| Expiry date | Jul 16, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/381
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods of fabricating interconnect structures for semiconductor dice comprise forming conductive elements in contact with bond pads on an active surface over a full pillar diameter of the conductive elements, followed by application of a photodefinable material comprising a photoresist to the active surface and over the conductive elements. The polymide material is selectively exposed and developed to remove photodefinable material covering at least tops of the conductive elements. Semiconductor dice and semiconductor die assemblies are also disclosed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.