Two silicon-containing precursors for gapfill enhancing dielectric liner
US8664127B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 14, 2011 |
| Grant date | Mar 4, 2014 |
| Priority date | — |
| Expiry date | May 9, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02271
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Aspects of the disclosure pertain to methods of depositing silicon oxide layers on substrates. In embodiments, silicon oxide layers are deposited by flowing a silicon-containing precursor having a Si—O bond, an oxygen-containing precursor and a second silicon-containing precursor, having both a Si—C bond and a Si—N bond, into a semiconductor processing chamber to form a conformal liner layer. Upon completion of the liner layer, a gap fill layer is formed by flowing a silicon-containing precursor having a Si—O bond, an oxygen-containing precursor into the semiconductor processing chamber. The presence of the conformal liner layer improves the ability of the gap fill layer to grow more smoothly, fill trenches and produce a reduced quantity and/or size of voids within the silicon oxide filler material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.