Field effect transistor and schottky diode structures
US8680611B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 30, 2012 |
| Grant date | Mar 25, 2014 |
| Priority date | — |
| Expiry date | Aug 30, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/516
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In accordance with an embodiment a structure can include a monolithically integrated trench field-effect transistor (FET) and Schottky diode. The structure can include a first gate trench extending into a semiconductor region, a second gate trench extending into the semiconductor region, and a source region flanking a side of the first gate trench. The source region can have a substantially triangular shape, and a contact opening extending into the semiconductor region between the first gate trench and the second gate trench. The structure can include a conductor layer disposed in the contact opening to electrically contact the source region along at least a portion of a slanted sidewall of the source region, and the semiconductor region along a bottom portion of the contact opening. The conductor layer can form a Schottky contact with the semiconductor region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.