Methods and structures for reducing heat exposure of thermally sensitive semiconductor devices
US8680674B2 · kind B2 · utility
3Cited by
6References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 31, 2012 |
| Grant date | Mar 25, 2014 |
| Priority date | — |
| Expiry date | Jul 14, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B12/50
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device comprises an integrated circuit (IC) die having a top side and a back side. The circuit substrate includes a heat source circuit, a heat sensitive circuit, a package substrate coupled to the top side of the circuit substrate, and a plurality of thermally conductive through-silicon vias (TSVs) formed from the back side of the circuit substrate to near but not through the top side of the circuit substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.