Nonvolatile memory device having a current limiting element
US8681530B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Jan 18, 2012 |
| Grant date | Mar 25, 2014 |
| Priority date | — |
| Expiry date | Feb 11, 2032 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2213/76
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Embodiments of the invention generally include a method of forming a nonvolatile memory device that contains a resistive switching memory element that has an improved device switching performance and lifetime, due to the addition of a current limiting component disposed therein. In one embodiment, the current limiting component comprises at least one layer of resistive material that is configured to improve the switching performance and lifetime of the formed resistive switching memory element. The electrical properties of the formed current limiting layer, or resistive layer, are configured to lower the current flow through the variable resistance layer during the logic state programming steps (i.e., “set” and “reset” steps) by adding a fixed series resistance in the formed resistive switching memory element found in the nonvolatile memory device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.