Method for producing a semiconductor wafer

US8685270B2 · kind B2 · utility

Assignee

• Siltronic AG · DE

Inventors

• Juergen Schwandner · Garching bei München, DE
• Thomas Buschhardt · Burghausen, DE
• Diego Feijoo · Burghausen, DE
• Michael Kerstan · Burghausen, DE
• Georg Pietsch · Burghausen, DE
• Guenter Schwab · Vilshofen an der Donau, DE

Key dates

• Filing date: Oct 12, 2010
• Grant date: Apr 1, 2014
• Expiry date: Dec 15, 2030

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/02024
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A method for producing a semiconductor wafer sliced from a single crystal includes rounding an edge using a grinding disk containing abrasives with an average grain size of 20.0-60.0 μm. A first simultaneous double-side material-removing process is performed wherein the semiconductor wafers are processed between two rotating ring-shaped working disks, each working disk having a working layer containing abrasives having an average grain size of 5.0-20.0 μm, wherein the semiconductor wafer is placed in a cutout in one of a plurality of carriers rotatable by a rolling apparatus such that the semiconductor wafer lies in a freely movable manner in the carrier and the wafer is movable on a cycloidal trajectory. A second simultaneous double-side material-removing process is performed including processing the semiconductor wafers between two rotating ring-shaped working disks, each working disk having a working layer containing abrasives having an average grain size of 0.5-15.0 μm.