Spin-torque magnetoresistive memory element and method of fabricating same
US8686484B2 · kind B2 · utility
65Cited by
8References
51Claims
0Family size
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Key dates
| Filing date | Jun 10, 2011 |
| Grant date | Apr 1, 2014 |
| Priority date | — |
| Expiry date | Dec 14, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N50/85
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A spin-torque magnetoresistive memory element has a high magnetoresistance and low current density. A free magnetic layer is positioned between first and second spin polarizers. A first tunnel barrier is positioned between the first spin polarizer and the free magnetic layer and a second tunnel barrier is positioned between the second spin polarizer and the free magnetic layer. The magnetoresistance ratio of the second tunnel barrier has a value greater than double the magnetoresistance ratio of the first tunnel barrier.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.