Method for fabricating a field effect device with weak junction capacitance
US8722499B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 24, 2012 |
| Grant date | May 13, 2014 |
| Priority date | — |
| Expiry date | Jan 24, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/115
Abstract
The field effect device is formed on a substrate of semiconductor on insulator type provided with a support substrate separated from a semiconductor film by an electrically insulating layer. The source and drain electrodes are formed in the semiconductor film on each side of the gate electrode. The electrically insulating layer comprises a first area having a first electric capacitance value between the semiconductor film and the support substrate facing the gate electrode. The electrically insulating layer comprises second and third areas having a higher electric capacitance value than the first value between the semiconductor film and the support substrate facing the source and drain electrodes.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.