Patent · US Active

High-k metal gate electrode structure formed by removing a work function on sidewalls in replacement gate technology

US8735236B2 · kind B2 · utility

5Cited by

0References

17Claims

0Family size

Assignee

GlobalFoundries Inc. · KY

Inventors

Klaus Hempel · Dresden, DE
Christopher M. Prindle · Poughkeepsie, US
Rolf Stephan · Dresden, DE

Key dates

Filing date	Dec 29, 2011
Grant date	May 27, 2014
Priority date	—
Expiry date	Sep 13, 2032

Classification

Technology area (CPC H)Electricity
CPC primaryH10D64/693
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

When forming sophisticated high-k metal gate electrode structures on the basis of a replacement gate approach, the fill conditions upon filling in the highly conductive electrode metal, such as aluminum, may be enhanced by removing the final work function metal, for instance a titanium nitride material in P-channel transistors, only preserving a well-defined bottom layer.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.