Method of semiconductor integrated circuit fabrication
US8735252B2 · kind B2 · utility
9Cited by
0References
15Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 7, 2012 |
| Grant date | May 27, 2014 |
| Priority date | — |
| Expiry date | Jun 7, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/024
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of fabricating a semiconductor IC is disclosed. The method includes receiving a device. The device includes a semiconductor substrate, a plurality of fins and trenches between fins in the semiconductor substrate. The method also includes filling the trenches with a dielectric material to form shallow trench isolations (STI), applying a low-thermal-budget annealing to the dielectric material, and applying a wet-treatment to the dielectric material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.