In-situ deposition of film stacks
US8741394B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 16, 2010 |
| Grant date | Jun 3, 2014 |
| Priority date | — |
| Expiry date | Aug 11, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/67207
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Methods for depositing film stacks by plasma enhanced chemical vapor deposition are described. In one example, a method for depositing a film stack on a substrate, wherein the film stack includes films of different compositions and the deposition is performed in a process station in-situ, is provided. The method includes, in a first plasma-activated film deposition phase, depositing a first layer of film having a first film composition on the substrate; in a second plasma-activated deposition phase, depositing a second layer of film having a second film composition on the first layer of film; and sustaining the plasma while transitioning a composition of the plasma from the first plasma-activated film deposition phase to the second plasma-activated film deposition phase.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.