Current selector for non-volatile memory in a cross bar array based on defect and band engineering metal-dielectric-metal stacks

US8766234B1 · kind B1 · utility

Assignee

• INTERMOLECULAR, INC. · US

Inventors

• Imran Hashim · Saratoga, US
• Venkat Ananthan · Cupertino, US
• Tony P. Chiang · Campbell, US
• Prashant B. Phatak · San Jose, US

Key dates

• Filing date: Dec 27, 2012
• Grant date: Jul 1, 2014
• Expiry date: Dec 27, 2032

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10N70/25

Abstract

Selector devices that can be suitable for memory device applications can have low leakage currents at low voltages to reduce sneak current paths for non selected devices, and high leakage currents at high voltages to minimize voltage drops during device switching. In some embodiments, the selector device can include a first electrode, a tri-layer dielectric layer, and a second electrode. The tri-layer dielectric layer can include a high leakage dielectric layer sandwiched between two lower leakage dielectric layers. The low leakage layers can function to restrict the current flow across the selector device at low voltages. The high leakage dielectric layer can function to enhance the current flow across the selector device at high voltages.