Gate-last fabrication of quarter-gap MGHK FET
US8786030B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Aug 9, 2012 |
| Grant date | Jul 22, 2014 |
| Priority date | — |
| Expiry date | Aug 9, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/667
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A quarter-gap p-type field effect transistor (PFET) formed by gate-last fabrication includes a gate stack formed on a silicon substrate, the gate stack including: a high-k dielectric layer located on the silicon substrate; and a gate metal layer located over the high-k dielectric layer, the gate metal layer including titanium nitride and having a thickness of about 20 angstroms; and a metal contact formed over the gate stack. A quarter-gap n-type field effect transistor (NFET) formed by gate-last fabrication includes a gate stack formed on a silicon substrate, the gate stack including: a high-k dielectric layer located on the silicon substrate; and a first gate metal layer located over the high-k dielectric layer, the first gate metal layer including titanium nitride; and a metal contact formed over the gate stack.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.