Doping of FinFET structures

US8796093B1 · kind B1 · utility

Assignee

• International Business Machines Corporation · US

Inventors

• Kangguo Cheng · Schenectady, US
• Bruce B. Doris · Brewster, US
• Ali Khakifirooz · Los Altos, US
• Alexander Reznicek · Troy, US

Key dates

• Filing date: Mar 14, 2013
• Grant date: Aug 5, 2014
• Expiry date: Mar 14, 2033

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/017

Abstract

A FinFET structure is fabricated using a process that facilitates the effective doping of fin structures. A doped layer is annealed to drive dopants into the fins. The doped layer is removed following annealing. Subsequent to removal of the doped layer, doped semiconductor material is grown epitaxially on the side walls of the fins, forming doped regions extending laterally from the fin side walls. Growth of the semiconductor material may be timed to form diamond-shaped, unmerged epitaxy.