Memory cell system with multiple nitride layers

US8809936B2 · kind B2 · utility

Assignees

• GlobalFoundries Inc. · KY
• Spansion LLC. · US

Inventors

• Lei Xue · 红钢城街道, CN
• Rinji Sugino · San Jose, US
• Youseok Suh · Cupertino, US
• Hidehiko Shiraiwa · San Jose, US
• Meng Ding · Beaumont, US
• Shenqing Fang · Fremont, US
• Joong S. Jeon · Seongnam-si, KR

Key dates

• Filing date: Jul 31, 2006
• Grant date: Aug 19, 2014
• Expiry date: May 17, 2027

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/685

Abstract

A memory cell system is provided including forming a first insulator layer over a semiconductor substrate, forming a charge trap layer over the first insulator layer, forming a second insulator layer over the charge trap layer, forming a top blocking intermediate layer over the second insulator layer, and forming a contact layer over the top blocking intermediate layer.