Bulk finFET with super steep retrograde well

US8815684B2 · kind B2 · utility

Assignee

• International Business Machines Corporation · US

Inventors

• Jin Cai · Somers, US
• Kevin K. Chan · Staten Island, US
• Robert H. Dennard · Croton-on-Hudson, US
• Bruce B. Doris · Brewster, US
• Barry P. Linder · Hastings-on-Hudson, US
• Ramachandran Muralidhar · Austin, US
• Ghavam G. Shahidi · Pound Ridge, US

Key dates

• Filing date: Dec 7, 2012
• Grant date: Aug 26, 2014
• Expiry date: Dec 7, 2032

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D84/853

Abstract

A method for forming a fin transistor in a bulk substrate includes forming a super steep retrograde well (SSRW) on a bulk substrate. The well includes a doped portion of a first conductivity type dopant formed below an undoped layer. A fin material is grown over the undoped layer. A fin structure is formed from the fin material, and the fin material is undoped or doped. Source and drain regions are provided adjacent to the fin structure to form a fin field effect transistor.