Resistive random access memory cells having metal alloy current limiting layers
US8817524B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Dec 20, 2012 |
| Grant date | Aug 26, 2014 |
| Priority date | — |
| Expiry date | Dec 20, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/20
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Provided are semiconductor devices, such as resistive random access memory (ReRAM) cells, that include current limiting layers formed from alloys of transition metals. Some examples of such alloys include chromium containing alloys that may also include nickel, aluminum, and/or silicon. Other examples include tantalum and/or titanium containing alloys that may also include a combination of silicon and carbon or a combination of aluminum and nitrogen. These current limiting layers may have resistivities of at least about 1 Ohm-cm. This resistivity level is maintained even when the layers are subjected to strong electrical fields and/or high temperature processing. In some embodiments, the breakdown voltage of a current limiting layer is at least about 8V. The high resistivity of the layers allows scaling down the size of the semiconductor devices including these layers while maintaining their performance.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.