Method of forming a semiconductor structure including a vertical nanowire

US8835255B2 · kind B2 · utility

Assignee

• GlobalFoundries Inc. · KY

Inventors

• Tim Baldauf · Dresden, DE
• Stefan Flachowsky · Dresden, DE
• Tom HERMANN · Dresden, DE
• Ralf Illgen · Dresden, DE

Key dates

• Filing date: Jan 23, 2013
• Grant date: Sep 16, 2014
• Expiry date: Apr 11, 2033

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/122
• WIPO field: Micro-structural and nano-technology
• WIPO sector: Chemistry

Abstract

A method comprises providing a semiconductor structure comprising a substrate and a nanowire above the substrate. The nanowire comprises a first semiconductor material and extends in a vertical direction of the substrate. A material layer is formed above the substrate. The material layer annularly encloses the nanowire. A first part of the nanowire is selectively removed relative to the material layer. A second part of the nanowire is not removed. A distal end of the second part of the nanowire distal from the substrate is closer to the substrate than a surface of the material layer so that the semiconductor structure has a recess at the location of the nanowire. The distal end of the nanowire is exposed at the bottom of the recess. The recess is filled with a second semiconductor material. The second semiconductor material is differently doped than the first semiconductor material.