Method for removing oxides
US8846163B2 · kind B2 · utility
187Cited by
114References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 5, 2012 |
| Grant date | Sep 30, 2014 |
| Priority date | — |
| Expiry date | Jun 5, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for removing native oxides from a substrate surface is provided. In one embodiment, the method comprises positioning a substrate having an oxide layer into a processing chamber, exposing the substrate to a gas mixture while forming a volatile film on the substrate and maintaining the substrate at a temperature below 65° C., heating the substrate to a temperature of at least about 75° C. to sublimate the volatile film and remove the oxide layer, and depositing a first layer on the substrate after heating the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.