Controlling CD and CD uniformity with trim time and temperature on a wafer by wafer basis

US8852964B2 · kind B2 · utility

Assignee

• Lam Research Corporation · US

Inventors

• Yoshie Kimura · Castro Valley, US
• Tom A. Kamp · San Jose, US
• Eric A. Pape · Campbell, US
• Rohit DeshPande · San Ramon, US
• Keith Gaff · Fremont, US
• Gowri Kamarthy · Pleasanton, US

Key dates

• Filing date: Feb 4, 2013
• Grant date: Oct 7, 2014
• Expiry date: Feb 4, 2033

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L2924/0002
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

Exemplary embodiments are directed to controlling CD uniformity of a wafer by controlling trim time on temperature in a plasma processing system. The plasma processing system has a wafer support assembly including a plurality of independently controllable temperature control zones across a chuck and a controller that controls each temperature control zone. The controller receives process control and temperature data associated with at least one wafer previously processed in a plasma chamber of the plasma processing system, and critical device parameters of a current wafer to be processed in the plasma chamber. The controller calculates a target trim time and a target temperature profile of the current wafer based on the process control and temperature data, and the critical device parameters. The current wafer is trimmed during the target trim time while the temperature of each device die location is controlled based on the target temperature profile.