Subtractive plasma etching of a blanket layer of metal or metal alloy
US8871107B2 · kind B2 · utility
13Cited by
11References
24Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 15, 2013 |
| Grant date | Oct 28, 2014 |
| Priority date | — |
| Expiry date | Mar 15, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76852
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming at least one metal or metal alloy feature in an integrated circuit is provided. In one embodiment, the method includes providing a material stack including at least an etch mask located on a blanker layer of metal or metal alloy. Exposed portions of the blanket layer of metal or metal alloy that are not protected by the etch mask are removed utilizing an etch comprising a plasma that forms a polymeric compound and/or complex which protects a portion of the blanket layer of metal or metal alloy located directly beneath the etch mask during the etch.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.