Method for producing a field effect transistor with a SiGe channel by ion implantation
US8877618B2 · kind B2 · utility
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1References
7Claims
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Key dates
| Filing date | Nov 6, 2013 |
| Grant date | Nov 4, 2014 |
| Priority date | — |
| Expiry date | Nov 6, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/822
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The semiconductor-on-insulator substrate includes a support, an electrically insulating film, a crystalline film made from semiconductor material, and a protection layer. Germanium ions are implanted in the semiconductor material film through the protection layer so as to form an amorphized area in contact with the protection layer and a crystalline area in contact with the electrically insulating film. The semiconductor material film is annealed so as to recrystallize the amorphized area from the crystalline area.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.