REO gate dielectric for III-N device on Si substrate
US8878188B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 22, 2013 |
| Grant date | Nov 4, 2014 |
| Priority date | — |
| Expiry date | Jul 18, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/8503
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A rare earth oxide gate dielectric on III-N material grown on a silicon substrate includes a single crystal stress compensating template positioned on a silicon substrate. The stress compensating template is substantially crystal lattice matched to the surface of the silicon substrate. A GaN structure is positioned on the surface of the stress compensating template and substantially crystal lattice matched thereto. An active layer of single crystal III-N material is grown on the GaN structure and substantially crystal lattice matched thereto. A single crystal rare earth oxide dielectric layer is grown on the active layer of III-N material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.