Method and apparatus for programming a spin-transfer torque magnetic random access memory (STTMRAM) array
US8879309B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 10, 2013 |
| Grant date | Nov 4, 2014 |
| Priority date | — |
| Expiry date | Jun 10, 2033 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/1675
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A spin-transfer torque memory random access memory (STTMRAM) cell is disclosed comprising a selected magnetic tunnel junction (MTJ) identified to be programmed; a first transistor having a first port, a second port and a gate, the first port of the first transistor coupled to the selected MTJ; a first neighboring MTJ coupled to the selected MTJ through the second port of the first transistor; a second transistor having a first port, a second port, and a gate, the first port of the second transistor coupled to the selected MTJ; a second neighboring MTJ coupled to the selected MTJ through the second port of the second transistor; a first bit/source line coupled to the second end of the selected MTJ; and a second bit/source line coupled to the second end of the first neighboring MTJ and the second end of the second neighboring MTJ.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.