Inventor · Sunnyvale, CA, US

Ebrahim Abedifard

128Patents
16h-index
28Co-inventors
86Inventor score

Filing activity: Jul 28, 2000 → Mar 22, 2025

Most-cited inventions

PatentTitleAreaCited byStatus
US8574928B2 MRAM fabrication method with sidewall cleaning Electricity 124 Active
US8883520B2 Redeposition control in MRAM fabrication process Electricity 64 Active
US8792269B1 Fast programming of magnetic random access memory (MRAM) Physics 57 Active
US6975538B2 Memory block erasing in a flash memory device Physics 51 Expired
US6366524B1 Address decoding in multiple-bank memory architectures Physics 43 Expired
US7180781B2 Memory block erasing in a flash memory device Physics 31 Expired
US6496425B1 Multiple bit line column redundancy Physics 25 Expired
US6275446A Clock generation circuits and methods Physics 24 Expired
US6304488A Current limiting negative switch circuit Physics 24 Expired
US6445625B1 Memory device redundancy selection having test inputs Physics 24 Expired
US6504768B1 Redundancy selection in memory devices with concurrent read and write Physics 24 Expired
US6711056B2 Memory with row redundancy Physics 22 Expired
US6671214B2 Methods of operating a multiple bit line column redundancy scheme having primary and redundant local and global bit lines Physics 21 Expired
US8796795B2 MRAM with sidewall protection and method of fabrication Electricity 18 Active
US6665221B2 Multiple bit line column redundancy with primary local and global bit lines and redundant local and global bit lines Physics 18 Expired
US8724380B1 Method for reading and writing multi-level cells Physics 17 Active
US10395710B1 Magnetic memory emulating dynamic random access memory (DRAM) Electricity 16 Active
US6711701B1 Write and erase protection in a synchronous memory Physics 15 Expired
US6721206B2 Methods of accessing floating-gate memory cells having underlying source-line connections Electricity 13 Expired
US6774426B2 Flash cell with trench source-line connection Electricity 12 Expired
US7663925B2 Method and apparatus for programming flash memory Physics 11 Active
US8238145B2 Shared transistor in a spin-torque transfer magnetic random access memory (STTMRAM) cell Physics 11 Active
US6667910B2 Method and apparatus for discharging an array well in a flash memory device Physics 10 Expired
US6859392B2 Preconditioning global bitlines Physics 9 Expired
US6396728B1 Array organization for high-performance memory devices Physics 9 Expired

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.