Patent · US Active

Mol insitu Pt rework sequence

US8883586B2 · kind B2 · utility

0Cited by

2References

12Claims

0Family size

Assignee

GlobalFoundries Inc. · KY

Inventors

Peter Baars · Dresden, DE
Marco Lepper · Dresden, DE
Uwe Kahler · Dresden, DE
Vivien Schroeder · Radeberg, DE

Key dates

Filing date	Apr 4, 2011
Grant date	Nov 11, 2014
Priority date	—
Expiry date	Sep 11, 2033

Classification

Technology area (CPC H)Electricity
CPC primaryH10D64/666
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

The amount of Pt residues remaining after forming Pt-containing NiSi is reduced by performing an O2 flash while shaping gate spacers, and then cleaning and applying a second application of Aqua Regia. Embodiments include sputter depositing a layer of Ni/Pt on a semiconductor substrate, annealing the Ni/Pt layer, wet stripping unreacted Ni, annealing the Ni stripped Ni/Pt layer, stripping unreacted Pt from the annealed Ni/Pt layer, e.g., with Aqua Regia, treating the Pt stripped Ni/Pt layer with an oxygen plasma, cleaning the Ni/Pt layer, and stripping unreacted Pt from the cleaned Ni/Pt layer, e.g., with a second application of Aqua Regia.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.