Gate-all-around nanowire MOSFET and method of formation

US8900951B1 · kind B1 · utility

Assignee

• International Business Machines Corporation · US

Inventors

• Kangguo Cheng · Schenectady, US
• Bruce B. Doris · Brewster, US
• Pouya Hashemi · White Plains, US
• Ali Khakifirooz · Los Altos, US
• Alexander Reznicek · Troy, US

Key dates

• Filing date: Sep 24, 2013
• Grant date: Dec 2, 2014
• Expiry date: Sep 24, 2033

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/151

Abstract

A method for fabricating a semiconductor device comprises forming a nanowire on an insulator layer at a surface of a substrate; forming a dummy gate over a portion of the nanowire and a portion of the insulator layer; forming recesses in the insulator layer on opposing sides of the dummy gate; forming spacers on opposing sides of the dummy gate; forming source regions and drain regions in the recesses in the insulator layer on opposing sides of the dummy gate; depositing an interlayer dielectric on the source regions and the drain regions; removing the dummy gate to form a trench; removing the insulator layer under the nanowire such that a width of the trench underneath the nanowire is equal to or less than a distance between the spacers; and forming a replacement gate in the trench.