Thermally stable high-K tetragonal HFO2 layer within high aspect ratio deep trenches
US8901706B2 · kind B2 · utility
3Cited by
3References
14Claims
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Key dates
| Filing date | Jan 6, 2012 |
| Grant date | Dec 2, 2014 |
| Priority date | — |
| Expiry date | Mar 8, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/201
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A trench structure that in one embodiment includes a trench present in a substrate, and a dielectric layer that is continuously present on the sidewalls and base of the trench. The dielectric layer has a dielectric constant that is greater than 30. The dielectric layer is composed of tetragonal phase hafnium oxide with silicon present in the grain boundaries of the tetragonal phase hafnium oxide in an amount ranging from 3 wt. % to 20 wt. %.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.