Multifunctional electrode
US8906736B1 · kind B1 · utility
Assignees
Inventors
Key dates
| Filing date | Sep 8, 2014 |
| Grant date | Dec 9, 2014 |
| Priority date | — |
| Expiry date | Sep 8, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B63/80
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A nonvolatile memory element is disclosed comprising a first electrode, a near-stoichiometric metal oxide memory layer having bistable resistance, and a second electrode in contact with the near-stoichiometric metal oxide memory layer. At least one electrode is a resistive electrode comprising a sub-stoichiometric transition metal nitride or oxynitride, and has a resistivity between 0.1 and 10 Ωcm. The resistive electrode provides the functionality of an embedded current-limiting resistor and also serves as a source and sink of oxygen vacancies for setting and resetting the resistance state of the metal oxide layer. Novel fabrication methods for the second electrode are also disclosed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.