Resistive random access memory cells having doped current limiting layers
US8912518B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 8, 2012 |
| Grant date | Dec 16, 2014 |
| Priority date | — |
| Expiry date | Nov 8, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B63/80
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Provided are semiconductor devices, such as resistive random access memory (ReRAM) cells, that include current limiting layers formed from doped metal oxides and/or nitrides. These current limiting layers may have resistivities of at least about 1 Ohm-cm. This resistivity level is maintained even when the layers are subjected to strong electrical fields and/or high temperature annealing. In some embodiments, the breakdown voltage of a current limiting layer may be at least about 8V. Some examples of such current limiting layers include titanium oxide doped with niobium, tin oxide doped with antimony, and zinc oxide doped with aluminum. Dopants and base materials may be deposited as separate sub-layers and then redistributed by annealing or may be co-deposited using reactive sputtering or co-sputtering. The high resistivity of the layers allows scaling down the size of the semiconductor devices including these layer while maintaining their performance.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.