Patent · US Active

Integrated circuits having protruding source and drain regions and methods for forming integrated circuits

US8912606B2 · kind B2 · utility

14Cited by

1References

14Claims

0Family size

Assignee

GlobalFoundries Inc. · KY

Inventors

Tim Baldauf · Dresden, DE
Tom Herrmann · Dresden, DE
Stefan Flachowsky · Dresden, DE
Ralf Illgen · Dresden, DE

Key dates

Filing date	Apr 24, 2012
Grant date	Dec 16, 2014
Priority date	—
Expiry date	May 24, 2032

Classification

Technology area (CPC H)Electricity
CPC primaryH10D62/822
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

Methods for forming integrated circuits and integrated circuits are disclosed. The integrated circuits comprise gate structures overlying and transverse to one or more fins that are delineated by trenches formed in a semiconductor substrate. Protruding portions are formed in the trenches in between the gate electrode structure on exposed sidewall surfaces of the one or more fins. The trenches are filled with an insulating material between the protruding portions and the gate structures.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.