Storage element for STT MRAM applications
US8921961B2 · kind B2 · utility
21Cited by
6References
20Claims
0Family size
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Key dates
| Filing date | Sep 14, 2012 |
| Grant date | Dec 30, 2014 |
| Priority date | — |
| Expiry date | Sep 14, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N50/10
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
An improved PMA STT MTJ storage element, and a method for forming it, are described. By inserting a suitable oxide layer between the storage and cap layers, improved PMA properties are obtained, increasing the potential for a larger Eb/kT thermal factor as well as a larger MR. Another important advantage is better compatibility with high processing temperatures, potentially facilitating integration with CMOS.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.