Patent · US Active

Method and system for etching plural layers on a workpiece including a lower layer containing an advanced memory material

US8932959B2 · kind B2 · utility

1Cited by

2References

17Claims

0Family size

Assignee

Applied Materials, Inc. · US

Inventors

Srinivas D. Nemani · Sunnyvale, US
Mang-Mang Ling · San Jose, US
Jeremiah T. Pender · San Jose, US
Kartik Ramaswamy · San Jose, US
Andrew Nguyen · San Jose, US
Sergey G. Belostotskiy · Santa Clara, US
Sumit Agarwal · Dublin, US

Key dates

Filing date	Mar 6, 2013
Grant date	Jan 13, 2015
Priority date	—
Expiry date	Mar 6, 2033

Classification

Technology area (CPC H)Electricity
CPC primaryH10N50/01
WIPO fieldElectrical machinery, apparatus, energy
WIPO sectorElectrical engineering

Abstract

Etching of a thin film stack including a lower thin film layer containing an advanced memory material is carried out in an inductively coupled plasma reactor having a dielectric RF window without exposing the lower thin film layer, and then the etch process is completed in a toroidal source plasma reactor.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.