Resistive switching devices and methods of formation thereof

US8941089B2 · kind B2 · utility

Assignee

• Adesto Technologies Corporation · US

Inventors

• Chakravarthy Gopalan · Santa Clara, US
• Jeffrey A. Shields · Sunnyvale, US
• Venkatesh P. Gopinath · Planada, US
• Janet Wang · Los Altos, US
• Kuei-Chang Tsai · Cupertino, US

Key dates

• Filing date: Feb 14, 2013
• Grant date: Jan 27, 2015
• Expiry date: Feb 14, 2033

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10N70/8836
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

In accordance with an embodiment of the present invention, a resistive switching device includes an opening disposed within a first dielectric layer, a conductive barrier layer disposed on sidewalls of the opening, a fill material including an inert material filling the opening. A solid electrolyte layer is disposed over the opening. The solid electrolyte contacts the fill material but not the conductive barrier layer. A top electrode is disposed over the solid electrolyte.