Barrier structure for a silver based RRAM and method
US8946667B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 13, 2012 |
| Grant date | Feb 3, 2015 |
| Priority date | — |
| Expiry date | Apr 13, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/884
Abstract
A method for forming a resistive switching device. The method includes providing a substrate having a surface region and forming a first dielectric material overlying the surface region of the substrate. A first wiring structure overlies the first dielectric material. The method forms a first electrode material overlying the first wiring structure and a resistive switching material comprising overlying the first electrode material. An active metal material is formed overlying the resistive switching material. The active metal material is configured to form an active metal region in the resistive switching material upon application of a thermal energy characterized by a temperature no less than about 100 Degree Celsius. In a specific embodiment, the method forms a blocking material interposing the active metal material and the resistive switching material to inhibit formation of the active metal region in the resistive switching material during the subsequent processing steps.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.