Methods for fabrication of an air gap-containing interconnect structure
US8952539B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 16, 2014 |
| Grant date | Feb 10, 2015 |
| Priority date | — |
| Expiry date | Jan 16, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/12044
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods for producing air gap-containing metal-insulator interconnect structures for VLSI and ULSI devices using a photo-patternable low k material as well as the air gap-containing interconnect structure that is formed are disclosed. More particularly, the methods described herein provide interconnect structures built in a photo-patternable low k material in which air gaps are defined by photolithography in the photo-patternable low k material. In the methods of the present invention, no etch step is required to form the air gaps. Since no etch step is required in forming the air gaps within the photo-patternable low k material, the methods disclosed in this invention provide highly reliable interconnect structures.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.