Low temperature transition metal oxide for memory device
US8962466B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 15, 2013 |
| Grant date | Feb 24, 2015 |
| Priority date | — |
| Expiry date | May 15, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B63/30
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A metal oxide formed by in situ oxidation assisted by radiation induced photo-acid is described. The method includes depositing a photosensitive material over a metal surface of an electrode. Upon exposure to radiation (for example ultraviolet light), a component, such as a photo-acid generator, of the photosensitive material forms an oxidizing reactant, such as a photo acid, which causes oxidation of the metal at the metal surface. As a result of the oxidation, a layer of metal oxide is formed. The photosensitive material can then be removed, and subsequent elements of the component can be formed in contact with the metal oxide layer. The metal oxide can be a transition metal oxide by oxidation of a transition metal. The metal oxide layer can be applied as a memory element in a programmable resistance memory cell. The metal oxide can be an element of a programmable metallization cell.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.