Band engineered semiconductor device and method for manufacturing thereof
US8963225B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Sep 12, 2013 |
| Grant date | Feb 24, 2015 |
| Priority date | — |
| Expiry date | Sep 12, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/832
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The disclosure is related to a band engineered semiconductor device comprising a substrate, a protruding structure that is formed in a recess in the substrate and is extending above the recess having a buried portion and an extended portion, and wherein at least the extended portion comprises a semiconductor material having an inverted ‘V’ band gap profile with a band gap value increasing gradually from a first value at lateral edges of the structure to a second value, higher than the first value, in a center of the structure. The disclosure is also related to the method of manufacturing of such band engineered semiconductor device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.