Methods for etching an etching stop layer utilizing a cyclical etching process

US8980758B1 · kind B1 · utility

Assignee

• Applied Materials, Inc. · US

Inventors

• Mang-Mang Ling · San Jose, US
• Sean S. Kang · San Ramon, US
• Jeremiah T. Pender · San Jose, US
• Srinivas D. Nemani · Sunnyvale, US
• Bradley J. Howard · Boise, US

Key dates

• Filing date: Sep 17, 2013
• Grant date: Mar 17, 2015
• Expiry date: Sep 17, 2033

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01J2237/334
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

Methods for etching an etching stop layer disposed on the substrate using a cyclical etching process are provided. In one embodiment, a method for etching an etching stop layer includes performing a treatment process on the substrate having a silicon nitride layer disposed thereon by supplying a treatment gas mixture into the processing chamber to treat the silicon nitride layer, and performing a chemical etching process on the substrate by supplying a chemical etching gas mixture into the processing chamber, wherein the chemical etching gas mixture includes at least an ammonium gas and a nitrogen trifluoride, wherein the chemical etching process etches the treated silicon nitride layer.