Methods and apparatus for controlling plasma in a process chamber
US8980760B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 9, 2012 |
| Grant date | Mar 17, 2015 |
| Priority date | — |
| Expiry date | Oct 3, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH05H2242/26
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
Methods and apparatus for controlling a plasma are provided herein. In some embodiments, a method may include supplying a first RF signal having a first frequency and a first period from an RF power source to a first electrode, wherein the first period is a first integer number of first cycles at the first frequency; supplying a second RF signal having a second frequency and a second period from the RF power source to the first electrode, wherein the second period is a second integer number of second cycles at the second frequency and wherein a first multiplicative product of the first frequency and the first integer number is equal to a second multiplicative product of the second frequency and the second integer number; and controlling the phase between the first and second periods to control an ion energy distribution of the plasma formed in a process chamber.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.