Fin isolation in multi-gate field effect transistors

US8987790B2 · kind B2 · utility

Assignee

• International Business Machines Corporation · US

Inventors

• Kangguo Cheng · Schenectady, US
• Balasubramanian S. Haran · Watervliet, US
• Ali Khakifirooz · Los Altos, US
• Shom Ponoth · Irvine, US
• Theodorus E. Standaert · Clifton Park, US
• Tenko Yamashita · Schenectady, US

Key dates

• Filing date: Nov 26, 2012
• Grant date: Mar 24, 2015
• Expiry date: Nov 26, 2032

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D86/215

Abstract

A method for fabricating a field effect transistor (FET) device includes forming a plurality of semiconductor fins on a substrate, removing a semiconductor fin of the plurality of semiconductor fins from a portion of the substrate, forming an isolation fin that includes a dielectric material on the substrate on the portion of the substrate, and forming a gate stack over the plurality of semiconductor fins and the isolation fin.