Method for removing halogen-containing residues from substrate
US8992689B2 · kind B2 · utility
8Cited by
41References
6Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 29, 2012 |
| Grant date | Mar 31, 2015 |
| Priority date | — |
| Expiry date | Jan 31, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/67201
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
Methods for removing halogen-containing residues from a substrate are provided. By combining the heat-up and plasma abatement steps, the manufacturing throughput can be improved. Further, by appropriately controlling the pressure in the abatement chamber, the removal efficiency can be improved as well.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.