Field effect transistor with offset counter-electrode contact

US8994142B2 · kind B2 · utility

Assignee

• COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES · FR

Inventors

• Maud Vinet · Voiron, FR
• Laurent Grenouillet · Voiron, FR
• Yannick Le Tiec · Crolles, FR
• Nicolas Posseme · Grenoble, FR

Key dates

• Filing date: Apr 4, 2012
• Grant date: Mar 31, 2015
• Expiry date: May 8, 2032

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/76283
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

The field effect transistor comprises a substrate successively comprising an electrically conducting support substrate, an electrically insulating layer and a semiconductor material layer. The counter-electrode is formed in a first portion of the support substrate facing the semi-conductor material layer. The insulating pattern surrounds the semi-conductor material layer to delineate a first active area and it penetrates partially into the support layer to delineate the first portion. An electrically conducting contact passes through the insulating pattern from a first lateral surface in contact with the counter-electrode through to a second surface. The contact is electrically connected to the counter-electrode.