Patent · US Active

Plasma activated conformal dielectric film deposition

US8999859B2 · kind B2 · utility

55Cited by

118References

25Claims

0Family size

Assignee

Novellus Systems, Inc. · US

Inventors

Shankar Swaminathan · Hillsboro, US
Jon Henri · West Linn, US
Dennis M. Hausmann · Lake Oswego, US
Pramod Subramonium · Beaverton, US
Mandyam Sriram · Beaverton, US
Vishwanathan Rangarajan · Beaverton, US
Kirthi Kattige · Portland, US
Bart van Schravendijk · Sunnyvale, US
Andrew John McKerrow · Dallas, US

Key dates

Filing date	Dec 18, 2013
Grant date	Apr 7, 2015
Priority date	—
Expiry date	Dec 18, 2033

Classification

Technology area (CPC H)Electricity
CPC primaryH01J2237/3365
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

Methods of depositing a film on a substrate surface include surface mediated reactions in which a film is grown over one or more cycles of reactant adsorption and reaction. In one aspect, the method is characterized by intermittent delivery of dopant species to the film between the cycles of adsorption and reaction.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.