Memory cells, semiconductor devices including such cells, and methods of fabrication

US9006075B2 · kind B2 · utility

Assignee

• Micron Technology, Inc. · US

Inventors

• Timothy A. Quick · Boise, US
• Eugene P. Marsh · Boise, US
• Stefan Uhlenbrock · Boise, US
• Chet E. Carter · Boise, US
• Scott E. Sills · Boise, US

Key dates

• Filing date: Nov 17, 2011
• Grant date: Apr 14, 2015
• Expiry date: May 15, 2033

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10N70/882

Abstract

Memory cells are disclosed, which cells include a cell material and an ion-source material over the cell material. A discontinuous interfacial material is included between the cell material and the ion-source material. Also disclosed are fabrication methods and semiconductor devices including the disclosed memory cells.