Middle-of-the-line constructs using diffusion contact structures

US9006100B2 · kind B2 · utility

Assignee

• GlobalFoundries Inc. · KY

Inventors

• Mahbub Rashed · Cupertino, US
• Yuansheng Ma · Santa Clara, US
• Irene Y. Lin · Los Altos Hills, US
• Jason E. Stephens · Cohoes, US
• Yunfei Deng · Berkeley, US
• Yuan Lei · Sunnyvale, US
• Jongwook Kye · Pleasanton, US
• Rod Augur · Hopewell Junction, US
• Shibly S. Ahmed · San Jose, US
• Subramani Kengeri · Norwood, US
• Suresh Venkatesan · Los Gatos, US

Key dates

• Filing date: Aug 7, 2012
• Grant date: Apr 14, 2015
• Expiry date: Aug 7, 2032

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L2924/0002
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

An approach for providing MOL constructs using diffusion contact structures is disclosed. Embodiments include: providing a first diffusion region in a substrate; providing, via a first lithography process, a first diffusion contact structure; providing, via a second lithography process, a second diffusion contact structure; and coupling the first diffusion contact structure to the first diffusion region and the second diffusion contact structure. Embodiments include: providing a second diffusion region in the substrate; providing a diffusion gap region between the first and second diffusion regions; providing the diffusion contact structure over the diffusion gap region; and coupling, via the diffusion contact structure, the first and second diffusion regions.