High aspect ratio etch with combination mask
US9018103B2 · kind B2 · utility
4Cited by
2References
16Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 26, 2013 |
| Grant date | Apr 28, 2015 |
| Priority date | — |
| Expiry date | Sep 26, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B41/27
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for etching features in a stack is provided. A combination hardmask is formed by forming a first hardmask layer comprising carbon or silicon oxide over the stack, forming a second hardmask layer comprising metal over the first hardmask layer, and patterning the first and second hardmask layers. The stack is etched through the combination hardmask.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.