Reverse conducting insulated gate bipolar transistor

US9018674B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Dorothea Werber · Munich, DE
• Anton Mauder · Kolbermoor, DE
• Frank Pfirsch · Birkenfeld, DE
• Hans-Joachim Schulze · Taufkirchen, DE
• Franz Hirler · Isen, DE
• Alexander Philippou · Munich, DE

Key dates

• Filing date: Apr 6, 2012
• Grant date: Apr 28, 2015
• Expiry date: Apr 6, 2032

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/142

Abstract

A semiconductor includes a drift zone of a first conductivity type arranged between a first side and a second side of a semiconductor body. The semiconductor device further includes a first region of the first conductivity type and a second region of a second conductivity type subsequently arranged along a first direction parallel to the second side. The semiconductor device further includes an electrode at the second side adjoining the first and second regions. The semiconductor device further includes a third region of the second conductivity type arranged between the drift zone and the first region. The third region is spaced apart from the second region and from the second side.